IRF6614PBF mosfet equivalent, power mosfet.
.3V
0.1
≤ 60µs PULSE WIDTH Tj = 25°C
0.01 0.1 1 10 100
2.3V
1 0.1 1
≤ 60µs PULSE WIDTH Tj = 150°C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Volt.
PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is f.
The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET packa.
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